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| SMBT3904/ MMBT3904 NPN Silicon Switching Transistor High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT3906 (PNP) 3 2 1 VPS05161 Type SMBT3904/ MMBT3904 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Marking s1A 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 60 6 200 330 150 -65 ... 150 Unit V mA mW C Total power dissipation, TS = 69 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 245 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2002 SMBT3904/ MMBT3904 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 0.65 0.85 0.95 VCEsat 0.2 0.3 hFE 40 70 100 60 30 300 ICBO 50 V(BR)EBO 6 V(BR)CBO 60 V(BR)CEO 40 typ. max. Unit V nA - V 1) Pulse test: t =300s, D = 2% 2 Feb-18-2002 SMBT3904/ MMBT3904 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf 50 tstg 200 tr 35 td 35 Open-circuit output admittance h21e h22e 100 1 400 40 h12e 0.5 8 F f = 200 Hz h11e 1 10 5 Ceb 8 fT Ccb 300 4 typ. max. Unit MHz pF dB 3 Feb-18-2002 f = 1 kHz, k 10-4 S ns SMBT3904/ MMBT3904 Test circuits Delay and rise time +3.0 V 300 ns D = 2% +10.9 V 0 10 k -0.5 V 275 C <4.0 pF <1.0 ns EHN00061 Storage and fall time +3.0 V t1 10 < t 1 < 500 s D = 2% +10.9 V 0 10 k 275 C 1N916 <4.0 pF -9.1 V <1.0 ns EHN00062 4 Feb-18-2002 SMBT3904/ MMBT3904 Total power dissipation Ptot = f(TS) Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 360 mW 300 270 2 EHP00756 C mA 10 2 5 V CE V BE P tot 240 210 180 150 120 10 1 5 90 60 30 0 0 15 30 45 60 75 90 105 120 C 150 TS 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 V BE sat , V CE sat Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC D= tp T tp EHP00935 DC current gain hFE = f (I C) VCE = 10V, normalized 10 1 h FE T EHP00765 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 125 C 10 0 25 C -55 C 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 10 -1 10 -1 5 10 0 5 10 1 mA 10 2 2 C 5 Feb-18-2002 SMBT3904/ MMBT3904 Short-circuit forward current transfer ratio h21e = f(IC) VCE = 10V, f = 1MHz 10 3 h 21e EHP00759 Open-circuit output admittance h22e = f (IC) VCE = 10V, f = 1MHz 10 2 s h 22e EHP00760 5 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 10 1 10 0 -1 10 5 10 0 C mA C 10 1 Delay time td = f (IC ) Rise time tr = f (IC) EHP00761 Storage time t stg = f(IC) 10 3 ns t r ,t d tr td 10 2 10 3 ns ts EHP00762 h FE = 10 25 C 125 C 10 2 h FE = 20 10 h FE = 20 10 VCC = 3 V 40 V 15 V 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C 6 Feb-18-2002 SMBT3904/ MMBT3904 Fall time tf = f (IC) Rise time tr = f (IC) 10 3 ns tf 25 C 125 C EHP00763 10 3 ns tr 25 C EHP00764 VCC = 40 V 10 2 h FE = 20 10 2 125 C VCC = 40 V h FE = 10 10 1 h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 10 3 C C Input impedance h11e = f (IC) VCE = 10V, f = 1kHz 10 2 h 11e k EHP00757 Open-circuit reverse voltage transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz 10 -3 h 12e EHP00758 10 1 5 10 -4 10 0 5 5 10 -1 10 -1 5 10 0 mA 10 1 10 -5 10 -1 5 10 0 mA 10 1 C C 7 Feb-18-2002 |
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